View NE5520279A_1049111.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX * HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.60.15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX.
Source
1.50.2
Source
0X001
4.4 MAX.
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.8 to 6.0 V
A
0.40.15 5.7 MAX.
0.80.15
1.0 MAX.
0.8 MAX.
3.60.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets * 0.7-2.5 GHz FIXED WIRELESS ACCESS * W-LAN * SHORT RANGE WIRELESS * RETAIL BUSINESS RADIO * SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added Efficiency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % mA nA nA V S V C/W 15 1.0 40 MIN 30.5
NE5520279A 79A TYP 32.0 10 45 800 100 100 1.4 1.3 18 8 1.9 VGS = 5.0 V VDS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 700 mA IDSS = 10 A Channel-to-Case MAX TEST CONDITIONS f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain
ADD
ID IGSS IDSS VTH gm BVDSS RTH
Electrical DC Characteristics
Notes: 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm
0.90.2
California Eastern Laboratories
0.20.1
1.2 MAX.
* HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz
2
Gate
Drain
Gate
Drain
NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VDS VGS ID ID PT TCH TSTG PARAMETERS UNITS V V A
2
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS VGS IDS PIN PARAMETERS UNITS V V A dBm TYP 3.0 2.0 0.8 25 Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power f = 1.8 GHz, VDS = 3.2 V
RATINGS 15.0 5.0 0.6 1.2 12.5 125
MAX 6.0 3.0 1.0 30
Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature
A W C C
-55 to +125
Note: 1. Duty Cycle 50%, Ton 1 s.
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s.
LARGE SIGNAL IMPEDANCE
(VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz) FREQUENCY (GHz) Zin () 1.77 -j6.71 ZOL () 1 1.25 -j5.73
ORDERING INFORMATION
PART NUMBER NE5520279A-T1-A QTY
1.8
Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power.
NE5520279A TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
Ids(mA)
(TA = 25C) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
35
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Output Power, Pout (dBm)
Pout
Output Power, Pout (dBm)
30
1000
100
30
1000 IDS
100
25 IDS 20
d
750
75
25 d 20
750
75
add
500
50
add
500
50
15
250
25
15
250
25
10
5
10
15
20
25
30
0
0
10
0
1
2
3
4
0
0
Input Power,Pin (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
Ids(mA)
Gate to Source Voltage, Vgs (V) IMD vs. TWO TONE OUTPUT POWER
2500
-10 f = 1.8 GHz f = 1 MHz VDS = 3.2 V IDQ = 700 mA
35
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Output Power, Pout (dBm)
30
f = 1.8 GHz VDS = 3.2 V IDQ = 700 mA
Pout 2000
100
-20 -30
d IDS
IMD, (dBc)
25
1500
75
-40 -50
IM3
IM5
20
1000
50
add
15 500 25
-60 -70 10
10
5
10
15
20
25
30
0
0
15
20
25
30
35
Input Power,Pin (dBm)
Average Two Tone Ouput Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
Ids(mA)
40
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Ids(mA)
2500
Output Power, Pout (dBm)
Output Power, Pout (dBm)
35
Pout
Drain Efficiency, d (%) Power Added Efficiency, add (%)
2000
100
35
Pout
2000
100
30
d
1500
75
30
d
1500
75
add
25 IDS 1000
50
25
add
IDS
1000
50
20
500
25
20
500
25
15
10
15
20
25
30
0 35
0
15
0
1
2
3
4
0
0
Input Power,Pin (dBm)
Gate to Source Voltage, Vgs (V)
Drain Efficiency, d (%) Power Added Efficiency, add (%)
f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA
40
f = 2.00 GHz VDS = 5.0 V Pin = 27 dBm
2500
Drain Efficiency, d (%) Power Added Efficiency, add (%)
f = 1.8 GHz VDS = 3.2 V IDQ = 300 mA
1250
Pout
Ids(mA)
35
f = 1.8 GHz VDS = 3.2 V Pin = 25 dBm
1250
NE5520279A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25
S11
j100
120 150
90
S21
60 30
j10 0
10
S22
25
50
100
0
180
S12
0
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 400 mA
-150
-30
-120
-90
-60
NE5520279A VD = 5.0 V, ID = 400 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 ANG -152.5 -166.9 -172.4 -175.6 -177.9 -179.8 178.7 177.3 176.0 174.6 173.6 172.2 171.0 169.9 168.7 167.5 166.3 165.2 164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149.6 MAG 11.510 5.882 3.896 2.897 2.278 1.865 1.569 1.346 1.168 1.024 0.911 0.812 0.728 0.655 0.594 0.541 0.494 0.451 0.415 0.384 0.356 0.329 0.305 0.285 0.267 0.248 0.232 0.217 0.204 0.192 0.180 0.170 0.161 0.152 0.144
S21 ANG 98.5 87.7 80.8 75.2 70.1 65.3 60.7 56.5 52.4 48.5 44.7 40.9 37.5 34.1 30.8 27.9 25.1 22.4 19.6 17.1 14.9 12.6 10.2 7.7 5.8 4.0 2.0 0.0 - 1.6 - 3.1 - 4.5 - 6.1 - 7.6 - 8.8 - 10.0 MAG 0.021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.003
S12 ANG 10.3 0.2 - 5.2 - 9.2 - 12.9 - 15.7 - 19.3 - 21.8 - 24.5 - 27.2 - 28.8 - 30.8 - 33.3 - 33.9 - 36.0 - 36.6 - 37.3 - 38.5 - 38.5 - 38.8 - 36.9 - 40.8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.953 0.952 0.954 0.958 0.961 0.960 0.960 0.964 0.965 0.963
S22 ANG -170.1 -175.4 -177.5 -178.5 -179.3 179.9 179.1 178.4 177.9 177.2 176.5 175.5 174.7 173.9 172.9 172.2 171.5 170.7 169.8 169.0 168.5 167.8 167.0 166.0 165.5 164.9 164.2 163.2 162.4 161.9 161.1 160.2 159.4 158.6 157.6
K 0.03 0.07 0.11 0.14 0.20 0.27 0.30 0.32 0.36 0.39 0.36 0.42 0.47 0.62 0.68 0.76 0.98 1.22 1.35 1.33 1.45 1.74 2.04 2.04 2.04 2.59 3.32 4.54 5.69 5.78 9.71 9.31 9.54 7.96 5.89
MAG1 (dB) 27.43 24.21 22.51 21.31 20.41 19.66 19.05 18.55 18.12 17.79 17.48 17.21 16.93 16.84 16.65 16.54 16.58 13.67 12.97 12.95 12.62 11.58 11.01 11.00 11.27 10.34 9.53 8.76 8.58 8.26 7.87 7.08 7.19 6.89 6.46
MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971
(K
K
2
-1
). When K 1, MAG is undefined and MSG values are used.
MSG =
|S21| ,K= |S12|
1 + | | 2 - |S11| 2 - |S22| 2 2 |S12 S21|
, = S11 S22 - S21 S12
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE5520279A APPLICATION CIRCUIT (2.40-2.48 GHz)
VG
C3 C9 C11
P1 J3
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
VD
J4
C2 C8 C10
1.7
GND
Drain
Gate
5.9
1.2
J1
IN
R1 C5
C14
C15
OU
A2
C6
98
U1
C1
J2
Source 0.5 6.1 0.5
0.5
RF IN
C4
Through hole 0.2 x 33
RF OUT
er=4.2 t=0.028
500855
5.74mm
.30mm .63mm
J3 +Vg
J4 +Vd
C13 C11
C9
C3
C2
C8
C10
C12
R1
C1
J1 RF INPUT
C5
J2
RF OUTPUT
NE5520279A
C7
C14
C4
C15
NE5520279A PARTS LIST
1 1 4 2 1 1 1 1 2 1 2 2 2 1 1 1 2 1 SD-500881 TF-100637 MA101J MCR03J200 600S2R7CW 600S2R2BW 600S1R2BW 600S5R6CW 600S3R3CW TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520279A 703401 1250-003 2052-5636-02 FD-500855B C2,C3 R1 C4 C15 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB SCHEMATIC DIAGRAM NE5520279A-EVAL TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD CASE 1 100pF CAP MURATA 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 2.2pF CAP ATC 0805 1.2pF CAP ATC 0603 5.6pF CAP ATC 0603 3.3pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
1.0
C13
C12
NE5520279A TYPICAL APPLICATION CIRCUIT PERFORMANCE
OUTPUT POWER vs. INPUT POWER
36 34 32
(TA = 25C)
-20.0 f= 2.44 GHz -20.0 -20.0 -25.0
IM3 vs. OUTPUT POWER
f= 2.44 GHz
Output Power, POUT (dBm)
IM3 (dBc)
30 28 26 24 22 20
3.6 V, 300 mA 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 500 mA
-30.0 -35.0 -40.0 -45.0 -50.0 -55.0 12
3.6 V, 300 mA 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 300 mA
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
14
16
18
20
22
24
26
28
30
Input Power, PIN (dBm)
Output Power, POUT (dBm), Each Tone
NE5520279A RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow
Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below
Condition Symbol IR260
VPS
VP215
Wave Soldering
WS260
Partial Heating
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/03/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.

▲Up To Search▲

Price & Availability of NE5520279A

	To Download NE5520279A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .